New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...

不知道大家有没有感觉到，有干货的论文都比较晦涩难读，如果又是英文的就更难懂了。而且有时读完了还有一些想法需要和作者深入讨论。在这个系列的直播中，波老师会邀请论文作者与读者朋友们直播互动，让作者亲自讲解自己论文的要点，并且还能现场 ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called ...

Size and power often seem like opposite sides of a coin. When you reduce size – one of the ever-pressing goals in our industry – you inevitably reduce power. But does that have to be the case? By ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...